Invention Grant
US07656714B2 Bitline bias circuit and nor flash memory device including the bitline bias circuit
有权
位线偏置电路和不包括位线偏置电路的闪存器件
- Patent Title: Bitline bias circuit and nor flash memory device including the bitline bias circuit
- Patent Title (中): 位线偏置电路和不包括位线偏置电路的闪存器件
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Application No.: US11265218Application Date: 2005-11-02
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Publication No.: US07656714B2Publication Date: 2010-02-02
- Inventor: Hong-Soo Jeon , Seung-Keun Lee
- Applicant: Hong-Soo Jeon , Seung-Keun Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2004-0088983 20041103; KR10-2004-0088984 20041103
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
The NOR flash memory device according to the present invention is operated by a high voltage supplied from bitline selection transistors and includes a bitline bias circuit for supplying a bias voltage of a constant level to the bitline bias transistor. In accordance with the present invention, it is possible to stably supply a desired voltage closing to a power voltage to the bitline bias transistor.
Public/Granted literature
- US20060092707A1 Bitline bias circuit and nor flash memory device including the bitline bias circuit Public/Granted day:2006-05-04
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