Invention Grant
US07656220B2 Semiconductor device employing fuse circuit and method for selecting fuse circuit system
失效
采用熔丝电路的半导体装置及熔丝电路系统的选择方法
- Patent Title: Semiconductor device employing fuse circuit and method for selecting fuse circuit system
- Patent Title (中): 采用熔丝电路的半导体装置及熔丝电路系统的选择方法
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Application No.: US11300408Application Date: 2005-12-15
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Publication No.: US07656220B2Publication Date: 2010-02-02
- Inventor: Yosuke Kawamata , Makoto Kitayama
- Applicant: Yosuke Kawamata , Makoto Kitayama
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-362302 20041215; JP2004-371189 20041222
- Main IPC: H01H37/76
- IPC: H01H37/76 ; H01H85/00

Abstract:
Disclosed are a semiconductor device capable of reducing the number of program fuses used therein, and a fuse circuit selection method capable of reducing the number of program fuses. The semiconductor device includes: a fuse circuit (11) and an entire inversion fuse circuit (12), each of which includes plural program fuses, and which store desired addresses based on cutting patterns of the plural program fuses, wherein the fuse circuit (11) and the entire inversion fuse circuit (12) are configured to be capable of storing addresses different from each other based on the same cutting pattern. As described above, since plural types of the cutting patterns of the program fuses exist even in the same address, the fuse circuit for use is appropriately selected, thus it is made possible to reduce the number of fuse elements to be cut as a whole. Thus, manufacturing cost of the semiconductor device can be reduced, and in addition, it is made possible to enhance reliability of the semiconductor device.
Public/Granted literature
- US20060125549A1 Semiconductor device employing fuse circuit and method for selecting fuse circuit system Public/Granted day:2006-06-15
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