Invention Grant
- Patent Title: Semiconductor device and its manufacturing method
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US12031924Application Date: 2008-02-15
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Publication No.: US07656041B2Publication Date: 2010-02-02
- Inventor: Chihiro Mochizuki , Hiroshi Kikuchi
- Applicant: Chihiro Mochizuki , Hiroshi Kikuchi
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2007-076481 20070323
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/00 ; H01L21/44

Abstract:
A technique for mounting a plurality of electronic parts on one surface of a wiring substrate is provided. A semiconductor device comprises a wiring substrate having connection pads disposed outside a parts mount; a plurality of electronic parts with the first surface having a plurality of electrodes and the second surface fixing; a first underlying insulation layer provided between the connecting pads and the electrodes; a first metal layer formed overlaid on the first underlying insulation layer and providing connections between the connecting pads and the electrodes; a second underlying insulation layer having electrically insulating properties, provided between the respective electrodes of adjacent electronic parts; a second metal layer formed overlaid on the second underlying insulation layer and providing connections between the respective electrodes of adjacent electronic parts; and a first surface insulation layer covering the first metal layer and a second surface insulation layer covering the second metal layer.
Public/Granted literature
- US20080230922A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD Public/Granted day:2008-09-25
Information query
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