Invention Grant
- Patent Title: Semiconductor device and a manufacturing method of the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11520816Application Date: 2006-09-14
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Publication No.: US07656019B2Publication Date: 2010-02-02
- Inventor: Yasumi Tsutsumi , Takashi Miwa
- Applicant: Yasumi Tsutsumi , Takashi Miwa
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2005-287775 20050930
- Main IPC: H01L23/495
- IPC: H01L23/495
Abstract:
A semiconductor device is disclosed wherein first wiring lines in a first row extend respectively from first connecting portions toward one side of a semiconductor chip, while second wiring lines extend respectively from second connecting portions toward the side opposite to the one side of the semiconductor chip. The reduction in size of the semiconductor device can be attained.
Public/Granted literature
- US20070075414A1 Semiconductor device and a manufacturing method of the same Public/Granted day:2007-04-05
Information query
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