Invention Grant
- Patent Title: Antifuse circuit with well bias transistor
- Patent Title (中): 防漏电路与偏置晶体管
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Application No.: US11867396Application Date: 2007-10-04
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Publication No.: US07656006B2Publication Date: 2010-02-02
- Inventor: William J. Wilcox
- Applicant: William J. Wilcox
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An antifuse circuit includes a terminal, an antifuse transistor, and a bias transistor. The antifuse transistor is formed on a substrate. The antifuse transistor is coupled to the terminal and includes a first gate terminal coupled to receive a first select signal. The bias transistor is coupled between the substrate and a bias voltage terminal. The bias transistor has a second gate terminal and is operable to couple the bias voltage terminal to the substrate responsive to an assertion of a bias enable signal at the second gate terminal.
Public/Granted literature
- US20080025135A1 ANTIFUSE CIRCUIT WITH WELL BIAS TRANSISTOR Public/Granted day:2008-01-31
Information query
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