Invention Grant
- Patent Title: Electrical stress protection apparatus and method of manufacture
- Patent Title (中): 电应力保护装置及其制造方法
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Application No.: US11467452Application Date: 2006-08-25
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Publication No.: US07656003B2Publication Date: 2010-02-02
- Inventor: Robert Bruce Davies
- Applicant: Robert Bruce Davies
- Applicant Address: US AZ Phoenix
- Assignee: HVVi Semiconductors, Inc
- Current Assignee: HVVi Semiconductors, Inc
- Current Assignee Address: US AZ Phoenix
- Agency: Cool Patent, P.C.
- Agent Kenneth J. Cool
- Main IPC: H01L29/47
- IPC: H01L29/47
Abstract:
In various embodiments, circuits and semiconductor devices and structures and methods to manufacture these structures and devices are disclosed. In one embodiment, a bidirectional polarity, voltage transient protection device is disclosed. The voltage transient protection device may include a bipolar PNP transistor having a turn-on voltage of VBE1, a bipolar NPN transistor having a turn-on voltage of VBE2, and a field effect transistor (FET) having a threshold voltage of VTH, wherein a turn-on voltage VTO of the voltage transient protection device is approximately equal to the sum of VBE1, VBE2, and VTH, that is, VTO≅VBE1+VBE2+VTH. Other embodiments are described and claimed.
Public/Granted literature
- US20080048215A1 ELECTRICAL STRESS PROTECTION APPARATUS AND METHOD OF MANUFACTURE Public/Granted day:2008-02-28
Information query
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