Invention Grant
- Patent Title: Semiconductor device using MEMS technology
- Patent Title (中): 半导体器件采用MEMS技术
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Application No.: US11341853Application Date: 2006-01-30
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Publication No.: US07655995B2Publication Date: 2010-02-02
- Inventor: Tatsuya Ohguro
- Applicant: Tatsuya Ohguro
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2005-109977 20050406
- Main IPC: H01L27/20
- IPC: H01L27/20

Abstract:
A semiconductor device using a MEMS technology according to an example of the present invention comprises a cavity, a lower electrode provided in a lower part of the cavity, an actuator provided in an upper part or inside of the cavity, an upper electrode connected to the actuator, and a conductive layer in contact with the lower electrode outside the cavity via a contact hole whose bottom face is provided above an upper face of the lower electrode in the cavity.
Public/Granted literature
- US20060226934A1 Semiconductor device using MEMS technology Public/Granted day:2006-10-12
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