Invention Grant
- Patent Title: Phase change memory device and method for fabricating the same
- Patent Title (中): 相变存储器件及其制造方法
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Application No.: US11940563Application Date: 2007-11-15
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Publication No.: US07655941B2Publication Date: 2010-02-02
- Inventor: Yung-Fa Lin , Te-Chun Wang
- Applicant: Yung-Fa Lin , Te-Chun Wang
- Applicant Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nanya Technology Corporation,ProMOS Technologies, Inc.,Winbond Electronics Corp.
- Current Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nanya Technology Corporation,ProMOS Technologies, Inc.,Winbond Electronics Corp.
- Current Assignee Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Agency: Quintero Law Office
- Priority: TW96118040A 20070521
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A phase change memory device comprising a substrate. A plurality of bottom electrodes isolated from each other is on the substrate. An insulating layer crosses a portion of the surfaces of any two of the adjacent bottom electrodes. A pair of phase change material spacers is on a pair of sidewalls of the insulating layer, wherein the pair of the phase change material spacers is on any two of the adjacent bottom electrodes, respectively. A top electrode is on the insulating layer and covers the phase change material spacers.
Public/Granted literature
- US20080290335A1 PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2008-11-27
Information query
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