Invention Grant
- Patent Title: Ion beam measuring method and ion implanting apparatus
- Patent Title (中): 离子束测量方法和离子注入装置
-
Application No.: US11583830Application Date: 2006-10-20
-
Publication No.: US07655929B2Publication Date: 2010-02-02
- Inventor: Sei Umisedo , Nariaki Hamamoto , Tadashi Ikejiri , Kohei Tanaka
- Applicant: Sei Umisedo , Nariaki Hamamoto , Tadashi Ikejiri , Kohei Tanaka
- Applicant Address: JP Kyoto
- Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP.2006-142640 20060523
- Main IPC: G21K5/10
- IPC: G21K5/10 ; H01J37/08

Abstract:
A change of a beam current of an ion beam which passes an outside of the side of a forestage beam restricting shutter, and which is incident on a forestage multipoints Faraday is measured while the forestage beam restricting shutter is driven in a y direction by a forestage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the forestage beam restricting shutter. A change of a beam current of the ion beam which passes an outside of the side of a poststage beam restricting shutter, and which is incident on a poststage multipoints Faraday is measured while the poststage beam restricting shutter is driven in the y direction by a poststage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the poststage beam restricting shutter. By using these results, an angle deviation, a diverging angle, and/or a beam size in the y direction of the ion beam can be obtained.
Public/Granted literature
- US20080073579A1 Ion beam measuring method and ion implanting apparatus Public/Granted day:2008-03-27
Information query