Invention Grant
- Patent Title: Techniques for confining electrons in an ion implanter
- Patent Title (中): 用于将电子限制在离子注入机中的技术
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Application No.: US11568000Application Date: 2006-12-07
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Publication No.: US07655922B2Publication Date: 2010-02-02
- Inventor: Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
- Applicant: Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J37/317
- IPC: H01J37/317

Abstract:
Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
Public/Granted literature
- US20080135775A1 TECHNIQUES FOR CONFINING ELECTRONS IN AN ION IMPLANTER Public/Granted day:2008-06-12
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