Invention Grant
US07655571B2 Integrated method and apparatus for efficient removal of halogen residues from etched substrates
有权
用于有效去除蚀刻基板上的卤素残留物的集成方法和装置
- Patent Title: Integrated method and apparatus for efficient removal of halogen residues from etched substrates
- Patent Title (中): 用于有效去除蚀刻基板上的卤素残留物的集成方法和装置
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Application No.: US11553132Application Date: 2006-10-26
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Publication No.: US07655571B2Publication Date: 2010-02-02
- Inventor: Mark Naoshi Kawaguchi , Kin Pong Lo , Brett Christian Hoogensen , Sandy M. Wen , Steven M. Kim
- Applicant: Mark Naoshi Kawaguchi , Kin Pong Lo , Brett Christian Hoogensen , Sandy M. Wen , Steven M. Kim
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.
Public/Granted literature
- US20080102646A1 INTEGRATED METHOD AND APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES Public/Granted day:2008-05-01
Information query
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