Invention Grant
US07655570B2 Etching method, program, computer readable storage medium and plasma processing apparatus
失效
蚀刻方法，程序，计算机可读存储介质和等离子体处理装置
- Patent Title: Etching method, program, computer readable storage medium and plasma processing apparatus
- Patent Title (中): 蚀刻方法，程序，计算机可读存储介质和等离子体处理装置
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Application No.: US11330336Application Date: 2006-01-12
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Publication No.: US07655570B2Publication Date: 2010-02-02
- Inventor: Akihiro Kikuchi , Yuichiro Sakamoto , Takashi Tsunoda
- Applicant: Akihiro Kikuchi , Yuichiro Sakamoto , Takashi Tsunoda
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-006332 20050113
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.
Public/Granted literature
- US20060154472A1 Etching method, program, computer readable storage medium and plasma processing apparatus Public/Granted day:2006-07-13
Information query
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