Invention Grant
- Patent Title: Electroprocessing profile control
- Patent Title (中): 电加工配置文件控制
-
Application No.: US11043570Application Date: 2005-01-26
-
Publication No.: US07655565B2Publication Date: 2010-02-02
- Inventor: Antoine P. Manens , Vladimir Galburt , Yan Wang , Alain Duboust , Donald J. K. Olgado , Liang-Yuh Chen
- Applicant: Antoine P. Manens , Vladimir Galburt , Yan Wang , Alain Duboust , Donald J. K. Olgado , Liang-Yuh Chen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/302 ; H01L21/461
Abstract:
A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially outward of substrate with a polarity opposite the bias applied tot he first electrode.
Public/Granted literature
- US20060166500A1 Electroprocessing profile control Public/Granted day:2006-07-27
Information query
IPC分类:
