Method of manufacturing semiconductor memory device

Invention Grant

US07655562B2 Method of manufacturing semiconductor memory device 失效

Title translation: 制造半导体存储器件的方法

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Patent Title: Method of manufacturing semiconductor memory device
Patent Title (中): 制造半导体存储器件的方法
Application No.: US11800290

Application Date: 2007-05-04
Publication No.: US07655562B2

Publication Date: 2010-02-02
Inventor: Min Chul Gil
Applicant: Min Chul Gil
Applicant Address: KR Icheon-si
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Icheon-si
Agency: Marshall, Gerstein & Borun LLP
Priority: KR10-2006-0121490 20061204
Main IPC: H01L21/4763
IPC: H01L21/4763

Method of manufacturing semiconductor memory device

Abstract:

A method of manufacturing a semiconductor device is disclosed. In the method of manufacturing the semiconductor device, a first insulating layer is formed on a semiconductor substrate. A metal line layer and an etch-stop layer are formed over the first insulating layer. The etch-stop layer and the metal line layer are patterned to form a metal line. A second insulating layer is formed on the first insulating layer and the etch-stop layer. A first etch process for etching part of the second insulating layer is performed by using a first etch gas so that the etch-stop layer is exposed. A second etch process for removing the etch-stop layer is performed by using a second etch gas so that the metal line is exposed.

Abstract(Chinese):

公开了制造半导体器件的方法。在制造半导体器件的方法中，在半导体衬底上形成第一绝缘层。在第一绝缘层上形成金属线层和蚀刻停止层。蚀刻停止层和金属线层被图案化以形成金属线。在第一绝缘层和蚀刻停止层上形成第二绝缘层。用于蚀刻第二绝缘层的一部分的第一蚀刻工艺通过使用第一蚀刻气体进行，使得蚀刻停止层被暴露。通过使用第二蚀刻气体来进行用于去除蚀刻停止层的第二蚀刻工艺，以使金属线被暴露。

Public/Granted literature

US20080132075A1 Method of manufacturing semiconductor memory device Public/Granted day:2008-06-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）