Invention Grant
- Patent Title: Method for eliminating loading effect using a via plug
- Patent Title (中): 使用通孔插头消除负载效应的方法
-
Application No.: US12135008Application Date: 2008-06-06
-
Publication No.: US07655554B2Publication Date: 2010-02-02
- Inventor: Wu XiangHui , Ching-Tien Ma , Man Hua Shen , Chi Yu Shan
- Applicant: Wu XiangHui , Ching-Tien Ma , Man Hua Shen , Chi Yu Shan
- Applicant Address: CN
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN
- Agency: Townsend and Townsend and Crew LLP
- Priority: CN200710042145 20070618
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
Method for eliminating loading effect using a via plug. According to an embodiment, the present invention provides a method of processing an integrated circuit wherein a loading effect is reduced. The method includes a step for providing a substrate, which is characterized by a first thickness. The method also includes a stop for forming an inter metal dielectric layer overlaying the substrate. The inter metal dielectric layer is characterized by a second thickness. The method additionally includes a step for forming a first photoresist layer overlaying the inter metal dielectric layer. The first photoresist layer is associated with a first pattern. Additionally, the method includes a step for forming a first opening positioned at least partially inside the inter metal dielectric layer. The first via opening is characterized by a first depth. The method additionally includes a step for removing the first photoresist layer. The method further includes a step for forming a via plug.
Public/Granted literature
- US20080308944A1 Method for eliminating duo loading effect using a via plug Public/Granted day:2008-12-18
Information query
IPC分类: