Invention Grant
- Patent Title: Double density method for wirebond interconnect
- Patent Title (中): 引线接合双重密度法
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Application No.: US11440342Application Date: 2006-05-24
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Publication No.: US07655552B2Publication Date: 2010-02-02
- Inventor: Mark Allen Gerber
- Applicant: Mark Allen Gerber
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yingsheng Tung; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50
Abstract:
A method, comprising bonding a first wire to a single die bond pad to form a first bond, bonding the first wire to a bond post to form a second bond, bonding a second wire to the first bond, and coupling the second wire to the bond post.
Public/Granted literature
- US20060208359A1 Double density method for wirebond interconnect Public/Granted day:2006-09-21
Information query
IPC分类:
