Invention Grant
- Patent Title: Advanced CMOS using super steep retrograde wells
- Patent Title (中): 先进的CMOS使用超级陡逆流井
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Application No.: US11928652Application Date: 2007-10-30
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Publication No.: US07655523B2Publication Date: 2010-02-02
- Inventor: Jeffrey A. Babcock , Angelo Pinto , Scott Balster , Alfred Haeusler , Gregory E. Howard
- Applicant: Jeffrey A. Babcock , Angelo Pinto , Scott Balster , Alfred Haeusler , Gregory E. Howard
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
Public/Granted literature
- US20080132012A1 Advanced CMOS Using Super Steep Retrograde Wells Public/Granted day:2008-06-05
Information query
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