Semiconductor device and method of manufacturing the same

Invention Grant

US07655516B2 Semiconductor device and method of manufacturing the same 失效

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and method of manufacturing the same
Patent Title (中): 半导体装置及其制造方法
Application No.: US11790549

Application Date: 2007-04-26
Publication No.: US07655516B2

Publication Date: 2010-02-02
Inventor: Keiji Ikeda
Applicant: Keiji Ikeda
Applicant Address: JP Tokyo
Assignee: Fujitsu Microelectronics Limited
Current Assignee: Fujitsu Microelectronics Limited
Current Assignee Address: JP Tokyo
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2006-246989 20060912
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L29/76

Semiconductor device and method of manufacturing the same

Abstract:

In an nMOSFET, a gate electrode is formed by a silicide layer comprised of NiSi. In a surface layer of a Ge substrate on both sides of the gate electrode, NiGe layers which are germanide layers comprised of NiGe are formed. On junction interfaces between the NiGe layers and the Ge substrate, first layers are formed which are formed by segregating a predetermined atom with high concentration, and on an interface between the gate electrode and an insulation film, a second layer is formed which is formed by segregating the same atom as that of the first layer with high concentration.

Abstract(Chinese):

在nMOSFET中，由NiSi构成的硅化物层形成栅电极。在栅电极两侧的Ge衬底的表面层中，形成由NiGe构成的锗化物层的NiGe层。在NiGe层和Ge衬底之间的结界面上，形成通过高浓度分离预定原子而形成的第一层，并且在栅电极和绝缘膜之间的界面上形成第二层，该第二层由与第一层高浓度的原子分离。

Public/Granted literature

US20080064156A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-03-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS