Invention Grant
US07655490B2 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer
有权
半导体器件，半导体器件和半导体晶片的制造方法
- Patent Title: Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer
- Patent Title (中): 半导体器件，半导体器件和半导体晶片的制造方法
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Application No.: US11745889Application Date: 2007-05-08
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Publication No.: US07655490B2Publication Date: 2010-02-02
- Inventor: Masahiro Ishida
- Applicant: Masahiro Ishida
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2003-298478 20030822
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a trench on the substrate around the device region and a semiconductor growth step of growing the semiconductor layer in the device region.
Public/Granted literature
- US20070205481A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR WAFER Public/Granted day:2007-09-06
Information query
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