Invention Grant
- Patent Title: Etching
- Patent Title (中): 刻蚀
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Application No.: US10832640Application Date: 2004-04-26
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Publication No.: US07655152B2Publication Date: 2010-02-02
- Inventor: Curt Nelson , Greg Long
- Applicant: Curt Nelson , Greg Long
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
Abstract:
An etching method includes applying a first electromagnetic radiation to an area of structure, thereby altering a characteristic of the structure in the area, and applying a second electromagnetic radiation to the structure, the second electromagnetic radiation configured to selectively ablate the structure based on the characteristic.
Public/Granted literature
- US20050236379A1 Etching Public/Granted day:2005-10-27
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