Invention Grant
- Patent Title: Back-gate decode personalization
- Patent Title (中): 后门解码个性化
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Application No.: US12039233Application Date: 2008-02-28
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Publication No.: US07652947B2Publication Date: 2010-01-26
- Inventor: Kerry Bernstein , Wilfried Haensch
- Applicant: Kerry Bernstein , Wilfried Haensch
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A novel methodology for the construction and operation of logical circuits and gates that makes use of and contact to a fourth (4th) terminal (substrates/bodies) of MOSFET devices is implemented by the present invention to realize a novel decode personalization. The novel construction and operation of the decode personalization provides for maintaining body-contacted MOSFET devices at a lower threshold voltage (VTh) when actively on (to increase overdrive and performance), and at a higher relative threshold voltage when off (to reduce leakage power). Because the threshold potential of a transistor moves inversely to its body potential, the body of each device is tied to the inverse of the device's drain voltage to achieve such a desirable threshold potential modulation effect for improved device, circuit, gate, decode personalization and logical family operation.
Public/Granted literature
- US20090219778A1 BACK-GATE DECODE PERSONALIZATION Public/Granted day:2009-09-03
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