Invention Grant
US07652272B2 Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
有权
用于极紫外（EUV）光源的等离子体碎片减轻
- Patent Title: Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
- Patent Title (中): 用于极紫外（EUV）光源的等离子体碎片减轻
-
Application No.: US11762011Application Date: 2007-06-12
-
Publication No.: US07652272B2Publication Date: 2010-01-26
- Inventor: David Ruzic , Robert Bristol , Bryan J. Rice
- Applicant: David Ruzic , Robert Bristol , Bryan J. Rice
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: H01J35/00
- IPC: H01J35/00
Abstract:
A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.
Public/Granted literature
- US20070235666A1 Plasma-Based Debris Mitigation for Extreme Ultraviolet (EUV) Light Source Public/Granted day:2007-10-11
Information query
