Invention Grant
- Patent Title: Charged-particle beam lithography with grid matching for correction of beam shot position deviation
- Patent Title (中): 带电粒子束光刻与网格匹配校正射束位置偏差
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Application No.: US11754598Application Date: 2007-05-29
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Publication No.: US07652271B2Publication Date: 2010-01-26
- Inventor: Seiji Wake , Hitoshi Sunaoshi
- Applicant: Seiji Wake , Hitoshi Sunaoshi
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-149571 20060530
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01J37/304

Abstract:
A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.
Public/Granted literature
- US20080067441A1 CHARGED-PARTICLE BEAM LITHOGRAPHY WITH GRID MATCHING FOR CORRECTION OF BEAM SHOT POSITION DEVIATION Public/Granted day:2008-03-20
Information query
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