Invention Grant
- Patent Title: Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
- Patent Title (中): 包括沟槽和不连续存储元件的电子器件及其形成和使用的方法
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Application No.: US11626768Application Date: 2007-01-24
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Publication No.: US07651916B2Publication Date: 2010-01-26
- Inventor: Chi-Nan Li , Cheong Min Hong
- Applicant: Chi-Nan Li , Cheong Min Hong
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc
- Current Assignee: Freescale Semiconductor, Inc
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
An electronic device can include a substrate including a first trench having a first bottom and a first wall. The electrode device can also include a first gate electrode within the first trench and adjacent to the first wall and overlying the first bottom of the first trench, and a second gate electrode within the first trench and adjacent to the first gate electrode and overlying the first bottom of the first trench. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between (i) the first gate electrode or the second gate electrode and (ii) the first bottom of the first trench. Processes of forming and using the electronic device are also described.
Public/Granted literature
Information query
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