Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
-
Application No.: US12003684Application Date: 2007-12-31
-
Publication No.: US07646656B2Publication Date: 2010-01-12
- Inventor: Chang-Ho Do
- Applicant: Chang-Ho Do
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2007-0066482 20070703
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor memory device includes: an input pad set configured to receive an external input signal and a reference voltage; an input buffer set configured to detect and transmit the input signal to an internal circuit of the semiconductor memory device by comparing the input signal with the reference voltage; and a reference voltage generation circuit configured to generate the reference voltage to supply the reference voltage to the input pad set and the input buffer set during a test operation, the reference voltage generation circuit being deactivated after the semiconductor memory device is packaged.
Public/Granted literature
- US20090010078A1 Semiconductor memory device Public/Granted day:2009-01-08
Information query