Invention Grant
- Patent Title: Internal voltage generator for use in semiconductor memory device
- Patent Title (中): 用于半导体存储器件的内部电压发生器
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Application No.: US11647401Application Date: 2006-12-29
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Publication No.: US07646652B2Publication Date: 2010-01-12
- Inventor: Sang-Jin Byeon
- Applicant: Sang-Jin Byeon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2006-0049123 20060531
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
An internal voltage generator stably supplies an internal voltage in a semiconductor device. The internal voltage generator includes: a first internal voltage generating means for supplying a first internal voltage which has a level corresponding to a first reference voltage using an external voltage; a second internal voltage generating means for supplying a second internal voltage which has a level corresponding to a second reference voltage using the external voltage; and a third internal voltage generating means for supplying a third internal voltage which has a level corresponding to a third reference voltage generated based on the first internal voltage, using the second internal voltage as a power source.
Public/Granted literature
- US20070280008A1 Internal voltage generator for use in semiconductor memory device Public/Granted day:2007-12-06
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