Invention Grant
- Patent Title: Nonvolatile memory having modified channel region interface
- Patent Title (中): 非易失性存储器具有修改的通道区域接口
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Application No.: US11775077Application Date: 2007-07-09
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Publication No.: US07646637B2Publication Date: 2010-01-12
- Inventor: Yi Ying Liao
- Applicant: Yi Ying Liao
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A nonvolatile memory with a modified channel region interface, such as a raised source and drain or a recessed channel region is included.
Public/Granted literature
- US20080067578A1 Nonvolatile Memory Having Modified Channel Region Interface Public/Granted day:2008-03-20
Information query
