Invention Grant
US07646632B2 Integrated circuit for setting a memory cell based on a reset current distribution 失效
用于基于复位电流分布设置存储单元的集成电路

Integrated circuit for setting a memory cell based on a reset current distribution
Abstract:
An integrated circuit includes an array of resistance changing memory cells and a first circuit. The first circuit is configured to set a selected memory cell to a crystalline state by applying a decreasing stair step pulse to the selected memory cell. The pulse is based on a reset current distribution for the array of memory cells.
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