Invention Grant
- Patent Title: Pinned layer in magnetoresistive sensor
- Patent Title (中): 磁阻传感器中的固定层
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Application No.: US11458896Application Date: 2006-07-20
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Publication No.: US07646569B2Publication Date: 2010-01-12
- Inventor: Jinshan Li , Kouichi Nishioka , Satoshi Shigematsu , Alexander M. Zeltser
- Applicant: Jinshan Li , Kouichi Nishioka , Satoshi Shigematsu , Alexander M. Zeltser
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: G11B5/127
- IPC: G11B5/127

Abstract:
A method for manufacturing a magnetic read sensor and a magnetic read sensor are provided. In one embodiment of the invention, the method includes providing a seed layer disposed over a substrate of the magnetic read sensor, providing a free layer disposed over a seed layer and providing a spacer layer disposed over the free layer. The method further includes providing a pinned layer disposed over the spacer layer. In one embodiment, the pinned layer includes cobalt and iron, wherein the concentration of iron in the pinned layer is between 33 and 37 atomic percent (at. %). The method further includes providing a pinning layer disposed over the pinned layer, wherein the pinning layer is in contact with the pinned layer.
Public/Granted literature
- US20080019059A1 PINNED LAYER IN MAGNETORESISTIVE SENSOR Public/Granted day:2008-01-24
Information query
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