Invention Grant
- Patent Title: Liquid crystal display device including polycrystalline silicon thin film transistor and method of fabricating the same
- Patent Title (中): 包括多晶硅薄膜晶体管的液晶显示装置及其制造方法
-
Application No.: US10980265Application Date: 2004-11-04
-
Publication No.: US07646442B2Publication Date: 2010-01-12
- Inventor: Myoung-Su Yang , Kum-Mi Oh
- Applicant: Myoung-Su Yang , Kum-Mi Oh
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Priority: KR10-2003-0079289 20031111
- Main IPC: G02F1/136
- IPC: G02F1/136 ; H01L21/00 ; H01L31/00

Abstract:
A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.
Public/Granted literature
Information query
IPC分类: