Invention Grant
- Patent Title: Current sensor and method of manufacturing current sensor
- Patent Title (中): 电流传感器和制造电流传感器的方法
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Application No.: US12213352Application Date: 2008-06-18
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Publication No.: US07646196B2Publication Date: 2010-01-12
- Inventor: Shigeru Shoji
- Applicant: Shigeru Shoji
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-166576 20070625
- Main IPC: G01R33/09
- IPC: G01R33/09 ; G01R33/05

Abstract:
Provided is a current sensor capable of detecting an induced magnetic field by a current to be detected with higher precision. The first and second modules are provided on facing surfaces of integrated substrates, respectively, with spacers in between. Each of the first and second modules includes an element substrate, and an MR element layer. On each of the MR elements layers, provided is an MR element having a stacked structure including a pinned layer, a nonmagnetic intermediate layer, and a free layer whose magnetization direction changes according to the induced magnetic field and which exhibits an anisotropic field in a direction different from that of the magnetization of the pinned layer. The stacked structures of the MR elements are provided in a same layer level.
Public/Granted literature
- US20080316655A1 Current sensor and method of manufacturing current sensor Public/Granted day:2008-12-25
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