Invention Grant
- Patent Title: Diamond enhanced thickness shear mode resonator
- Patent Title (中): 钻石增强厚度剪切模式谐振器
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Application No.: US11944364Application Date: 2007-11-21
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Publication No.: US07646138B2Publication Date: 2010-01-12
- Inventor: Oliver Williams
- Applicant: Oliver Williams
- Applicant Address: BE Leuven BE Diepenbeek
- Assignee: Interuniversitair Microelektronica Centrum (IMEC),Universiteit Hasselt
- Current Assignee: Interuniversitair Microelektronica Centrum (IMEC),Universiteit Hasselt
- Current Assignee Address: BE Leuven BE Diepenbeek
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Main IPC: H01L41/00
- IPC: H01L41/00
Abstract:
A thickness shear mode (TSM) resonator is described, comprising a diamond layer. The diamond layer is preferably a high quality diamond layer with at least 90% sp3 bonding or diamond bonding. A method for manufacturing such a resonator is also described. The thickness shear mode resonator according to embodiments described herein may advantageously be used in biosensor application and in electrochemistry applications.
Public/Granted literature
- US20080157632A1 Diamond Enhanced Thickness Shear Mode Resonator Public/Granted day:2008-07-03
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