Invention Grant
US07646071B2 Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory
有权
用于改善浮体细胞（FBC）存储器的存储器操作的非对称沟道掺杂
- Patent Title: Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory
- Patent Title (中): 用于改善浮体细胞（FBC）存储器的存储器操作的非对称沟道掺杂
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Application No.: US11444941Application Date: 2006-05-31
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Publication No.: US07646071B2Publication Date: 2010-01-12
- Inventor: Ibrahim Ban , Avci E. Uygar , David L. Kencke
- Applicant: Ibrahim Ban , Avci E. Uygar , David L. Kencke
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
An improved dynamic memory cell using a semiconductor fin or body is described. Asymmetrical doping is used in the channel region, with more dopant under the back gate to improve retention without significantly increasing read voltage.
Public/Granted literature
- US20070278572A1 Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory Public/Granted day:2007-12-06
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