Invention Grant
- Patent Title: Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
- Patent Title (中): 集成电路中的应变通道晶体管和第二半导体元件的结构和方法
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Application No.: US11483913Application Date: 2006-07-10
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Publication No.: US07646068B2Publication Date: 2010-01-12
- Inventor: Chih-Hsin Ko , Wen-Chin Lee , Yee-Chia Yeo , Chun-Chieh Lin , Chenming Hu
- Applicant: Chih-Hsin Ko , Wen-Chin Lee , Yee-Chia Yeo , Chun-Chieh Lin , Chenming Hu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/00
Abstract:
A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.
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