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US07646067B2 Complementary metal-oxide-semiconductor transistor including multiple gate conductive layers and method of manufacturing the same 失效
包括多个栅极导电层的互补金属氧化物半导体晶体管及其制造方法

Complementary metal-oxide-semiconductor transistor including multiple gate conductive layers and method of manufacturing the same
Abstract:
A CMOS transistor and a method of manufacturing the CMOS transistor are disclosed. An NMOS transistor is formed on a first region of a semiconductor substrate. A PMOS transistor is formed on a second region of a semiconductor substrate. The NMOS transistor includes a first gate conductive layer. The PMOS transistor includes a second gate conductive layer. The first gate conductive layer includes a metal having a nitrogen concentration increasing in a direction from a lower portion toward an upper portion. In addition, the metal has a work function of about 4.0 eV to about 4.3 eV. The third gate conductive layer includes a metal having a nitrogen concentration increasing in a direction from a lower portion toward an upper portion. In addition, the metal has a work function of about 4.7 eV to about 5.0 eV.
Abstract(Chinese):

公开了CMOS晶体管和制造CMOS晶体管的方法。 NMOS晶体管形成在半导体衬底的第一区域上。 PMOS晶体管形成在半导体衬底的第二区域上。 NMOS晶体管包括第一栅极导电层。 PMOS晶体管包括第二栅极导电层。 第一栅极导电层包括在从下部朝向上部的方向上氮浓度增加的金属。 此外，金属具有约4.0eV至约4.3eV的功函数。 第三栅极导电层包括在从下部朝向上部的方向上氮浓度增加的金属。 此外，金属具有约4.7eV至约5.0eV的功函数。

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