Invention Grant
US07646060B2 Method and device of field effect transistor including a base shorted to a source region
有权
场效应晶体管的方法和装置，其包括与源极区短接的基极
- Patent Title: Method and device of field effect transistor including a base shorted to a source region
- Patent Title (中): 场效应晶体管的方法和装置，其包括与源极区短接的基极
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Application No.: US10570852Application Date: 2003-09-05
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Publication No.: US07646060B2Publication Date: 2010-01-12
- Inventor: Christopher Harris , Andrei Konstantinov
- Applicant: Christopher Harris , Andrei Konstantinov
- Applicant Address: SE Kista
- Assignee: Cree Sweden AB
- Current Assignee: Cree Sweden AB
- Current Assignee Address: SE Kista
- Agency: Dilworth & Barrese LLP
- International Application: PCT/SE03/01382 WO 20030905
- International Announcement: WO2005/024923 WO 20050317
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
Method for producing a field effect transistor having a source region (9), a drain region and a channel layer (11) interconnecting the source and drain regions, and including the step of providing a sacrificial layer (4) on part of a semiconductor material (1) whose edge is used to define the edge of an implant, such as the source region (9), in the semiconductor material (1), where the edge (4c) of the sacrificial layer (4) is subsequently used to define the edge of a gate (16).
Public/Granted literature
- US20060252212A1 Method and device Public/Granted day:2006-11-09
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