Invention Grant
US07646059B2 Semiconductor device including field effect transistor for use as a high-speed switching device and a power device
失效
包括用作高速开关装置的场效应晶体管和功率器件的半导体装置
- Patent Title: Semiconductor device including field effect transistor for use as a high-speed switching device and a power device
- Patent Title (中): 包括用作高速开关装置的场效应晶体管和功率器件的半导体装置
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Application No.: US11501715Application Date: 2006-08-10
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Publication No.: US07646059B2Publication Date: 2010-01-12
- Inventor: Yusuke Kawaguchi , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita
- Applicant: Yusuke Kawaguchi , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-233428 20050811; JP2006-215204 20060808
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/119
Abstract:
A body layer of a first conductivity type is formed on a semiconductor substrate, and a source layer of a second conductivity type is formed in a surface region of the body layer. An offset layer of the second conductivity type is formed on the semiconductor substrate, and a drain layer of the second conductivity type is formed in a surface region of the offset layer. An insulating film is embedded in a trench formed in the surface region of the offset layer between the source layer and the drain layer. A gate insulating film is formed on the body layer and the offset layer between the source layer and the insulating film. A gate electrode is formed on the gate insulating film. A first peak of an impurity concentration profile in the offset layer is formed at a position deeper than the insulating film.
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