A semiconductor device in which a DRAM and a SRAM are mixedly mounted is provided. The DRAM and the SRAM have a stack-type structure in which a bitline is formed below a capacitive element. A cross couple connection of the SRAM is formed in a layer or below the layer in which a capacitive lower electrode of the DRAM is formed and in a layer or above the layer in which the bitline is formed. For example, the cross couple connection of the SRAM is formed in a same layer as a capacitive contact.