Invention Grant
- Patent Title: Field effect transistor with a fin structure
- Patent Title (中): 具有翅片结构的场效应晶体管
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Application No.: US11559656Application Date: 2006-11-14
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Publication No.: US07646046B2Publication Date: 2010-01-12
- Inventor: Christian Russ , Harald Gossner , Thomas Schulz
- Applicant: Christian Russ , Harald Gossner , Thomas Schulz
- Applicant Address: DE
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE
- Agency: Dickstein, Shapiro, LLP.
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A field effect transistor with a fin structure having a first and a second source/drain region; a body region formed within the fin structure and between the first and the second source/drain region; a metallically conductive region formed within a part of the first source/drain region, the metallically conductive region being adjacent to the body region or to a lightly doped region disposed between the body region and the first source/drain region; and a current ballasting region formed within a part of the second source/drain region.
Public/Granted literature
- US20080111163A1 FIELD EFFECT TRANSISTOR WITH A FIN STRUCTURE Public/Granted day:2008-05-15
Information query
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