Invention Grant
- Patent Title: Method of fabricating heteroepitaxial microstructures
- Patent Title (中): 制造异质外延微结构的方法
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Application No.: US11852562Application Date: 2007-09-10
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Publication No.: US07646038B2Publication Date: 2010-01-12
- Inventor: Bruce Faure , Fabrice Letertre , Bruno Ghyselen
- Applicant: Bruce Faure , Fabrice Letertre , Bruno Ghyselen
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0015279 20001127; EP03291284 20030527
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L31/109 ; H01L31/0328 ; H01L31/0336

Abstract:
An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.
Public/Granted literature
- US20080210975A1 METHOD OF FABRICATING HETEROEPITAXIAL MICROSTRUCTURES Public/Granted day:2008-09-04
Information query
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