Invention Grant
- Patent Title: Dry etchback of interconnect contacts
- Patent Title (中): 互连触点的干蚀刻
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Application No.: US11946922Application Date: 2007-11-29
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Publication No.: US07645700B2Publication Date: 2010-01-12
- Inventor: Theodorus E Standaert , William H Brearley , Stephen E Greco , Sujatha Sankaran
- Applicant: Theodorus E Standaert , William H Brearley , Stephen E Greco , Sujatha Sankaran
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joseph Petrokaitis
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The recessed contact is then subsequently metalized during the M1 liner/plating process. The tungsten contact height is reduced after it has been fully formed.
Public/Granted literature
- US20080088027A1 DRY ETCHBACK OF INTERCONNECT CONTACTS Public/Granted day:2008-04-17
Information query
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