Invention Grant
US07645691B2 Method for forming zener zap diodes and ohmic contacts in the same integrated circuit
有权
在同一集成电路中形成齐纳二极管和欧姆接触的方法
- Patent Title: Method for forming zener zap diodes and ohmic contacts in the same integrated circuit
- Patent Title (中): 在同一集成电路中形成齐纳二极管和欧姆接触的方法
-
Application No.: US12333207Application Date: 2008-12-11
-
Publication No.: US07645691B2Publication Date: 2010-01-12
- Inventor: Schyi-yi Wu
- Applicant: Schyi-yi Wu
- Applicant Address: US CA San Jose
- Assignee: Micrel, Inc.
- Current Assignee: Micrel, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patent Law Group LLP
- Agent Carmen C. Cook
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/44
Abstract:
A method for forming an ohmic contact and a zener zap diode in an integrated circuit includes forming a first contact opening in the insulating layer over a first diffusion region to expose the semiconductor substrate; forming a barrier metal layer on the insulating layer and in the first contact opening; forming a second contact opening in the barrier metal layer over a second diffusion region and the insulating layer to expose the semiconductor substrate; forming a third contact opening in the barrier metal layer and the insulating layer over a third diffusion region to expose the semiconductor substrate; forming an aluminum layer on the barrier metal layer and the insulating layer and in the first, second and third contact openings; and patterning the aluminum layer to form the ohmic contact over the first diffusion region and the zener zap diode over the second and third diffusion regions.
Public/Granted literature
- US20090093116A1 Method for forming Zener Zap Diodes and Ohmic Contacts in the Same Integrated Circuit Public/Granted day:2009-04-09
Information query
IPC分类:
