Invention Grant
- Patent Title: Nanotip capacitor
- Patent Title (中): 纳米电容器
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Application No.: US11707712Application Date: 2007-02-16
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Publication No.: US07645669B2Publication Date: 2010-01-12
- Inventor: Sheng Teng Hsu , Fengyan Zhang
- Applicant: Sheng Teng Hsu , Fengyan Zhang
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A nanotip capacitor and associated fabrication method are provided. The method provides a bottom electrode and grows electrically conductive nanotips overlying the bottom electrode. An electrically insulating dielectric is deposited overlying the nanotips, and an electrically conductive top electrode is deposited overlying dielectric-covered nanotips. Typically, the dielectric is deposited by forming a thin layer of dielectric overlying the nanotips using an atomic layer deposition (ALD) process. In one aspect, the electrically insulating dielectric covering the nanotips forms a three-dimensional interface of dielectric-covered nanotips. Then, the electrically conductive top electrode overlying the dielectric-covered nanotips forms a three-dimensional top electrode interface, matching the first three-dimensional interface of the dielectric-covered nanotips.
Public/Granted literature
- US20080197399A1 Nanotip capacitor Public/Granted day:2008-08-21
Information query
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