Invention Grant
- Patent Title: Two-step self-aligned source etch with large process window
- Patent Title (中): 两步自对准源蚀刻与大工艺窗口
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Application No.: US11611363Application Date: 2006-12-15
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Publication No.: US07645667B2Publication Date: 2010-01-12
- Inventor: Zhongshan Hong , Xue Li
- Applicant: Zhongshan Hong , Xue Li
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Townsend and Townsend and Crew LLP
- Priority: CN200610119024 20061130
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/302 ; H01L21/461
Abstract:
System and method for self-aligned etching. According to an embodiment, the present invention provides a method for performing self-aligned source etching process. The method includes a step for providing a substrate material. The method also includes a step for forming a layer of etchable oxide material overlying at least a portion of the substrate material. The layer of etchable oxide material can characterized by a first thickness. The layer of etchable oxide material includes a first portion, a second portion, and a third portion. The second portion is positioned between the first portion and the third portion. The method additionally includes a step for forming a plurality of structures overlying the layer of etchable oxide material. The plurality of structures includes a first structure and a second structure.
Public/Granted literature
- US20080128777A1 TWO-STEP SELF-ALIGNED SOURCE ETCH WTIH LARGE PROCESS WINDOW Public/Granted day:2008-06-05
Information query
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