Semiconductor device having shallow b-doped region and its manufacture

Invention Grant

US07645665B2 Semiconductor device having shallow b-doped region and its manufacture 有权

Title translation: 半导体器件具有较浅的b掺杂区域及其制造

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Patent Title: Semiconductor device having shallow b-doped region and its manufacture
Patent Title (中): 半导体器件具有较浅的b掺杂区域及其制造
Application No.: US11607927

Application Date: 2006-12-04
Publication No.: US07645665B2

Publication Date: 2010-01-12
Inventor: Tomohiro Kubo , Kenichi Okabe , Tomonari Yamamoto
Applicant: Tomohiro Kubo , Kenichi Okabe , Tomonari Yamamoto
Applicant Address: JP Tokyo
Assignee: Fujitsu Microelectronics Limited
Current Assignee: Fujitsu Microelectronics Limited
Current Assignee Address: JP Tokyo
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2006-094702 20060330
Main IPC: H01L21/8238
IPC: H01L21/8238

Semiconductor device having shallow b-doped region and its manufacture

Abstract:

A method for manufacturing a semiconductor device has the steps of: (a) implanting boron (B) ions into a semiconductor substrate; (b) implanting fluorine (F) or nitrogen (N) ions into the semiconductor device; (c) after the steps (a) and (b) are performed, executing first annealing with a heating time of 100 msec or shorter relative to a region of the semiconductor substrate into which ions were implanted; and (d) after the step (c) is performed, executing second annealing with a heating time longer than the heating time of the first annealing, relative to the region of the semiconductor substrate into which ions were implanted. The method for manufacturing a semiconductor device is provided which can dope boron (B) shallowly and at a high concentration.

Abstract(Chinese):

制造半导体器件的方法具有以下步骤：（a）将硼（B）离子注入到半导体衬底中; （b）将氟（F）或氮（N）离子注入到半导体器件中; （c）在执行步骤（a）和（b）之后，相对于其中注入离子的半导体衬底的区域，以100msec或更短的加热时间执行第一退火; 和（d）在执行步骤（c）之后，相对于其中注入离子的半导体衬底的区域，以比第一退火的加热时间长的加热时间执行第二退火。提供半导体器件的制造方法，其能够以高浓度浓缩硼（B）。

Public/Granted literature

US20070232039A1 Semiconductor device having shallow B-doped region and its manufacture Public/Granted day:2007-10-04

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS