Double gated transistor and method of fabrication

Invention Grant

US07645650B2 Double gated transistor and method of fabrication 有权

Title translation: 双门控晶体管和制造方法

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Patent Title: Double gated transistor and method of fabrication
Patent Title (中): 双门控晶体管和制造方法
Application No.: US11774663

Application Date: 2007-07-09
Publication No.: US07645650B2

Publication Date: 2010-01-12
Inventor: Andres Bryant , Meikei Ieong , K. Paul Muller , Edward J. Nowak , David M. Fried , Jed Rankin
Applicant: Andres Bryant , Meikei Ieong , K. Paul Muller , Edward J. Nowak , David M. Fried , Jed Rankin
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Schmeiser, Olsen & Watts
Agent Anthony J. Canale
Main IPC: H01L21/84
IPC: H01L21/84

Double gated transistor and method of fabrication

Abstract:

A method for forming a transistor. A semiconductor substrate is provided. The semiconductor substrate is patterned to provide a first body edge. A first gate structure of a first fermi level is provided adjacent the first body edge. The semiconductor substrate is patterned to provide a second body edge. The first and second body edges of the semiconductor substrate define a transistor body. A second gate structure of a second fermi level is provided adjacent the second body edge. A substantially uniform dopant concentration density is formed throughout the transistor body.

Abstract(Chinese):

一种形成晶体管的方法。提供半导体衬底。图案化半导体衬底以提供第一本体边缘。在第一身体边缘附近提供第一费米能级的第一门结构。图案化半导体衬底以提供第二本体边缘。半导体衬底的第一和第二主体边缘限定晶体管体。在第二身体边缘附近设置第二费米能级的第二门结构。在整个晶体管本体中形成基本均匀的掺杂剂浓度密度。

Public/Granted literature

US20070254438A1 DOUBLE GATED TRANSISTOR AND METHOD OF FABRICATION Public/Granted day:2007-11-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体