Invention Grant
- Patent Title: Manufacture of electronic devices comprising thin-film circuit elements
- Patent Title (中): 制造包括薄膜电路元件的电子器件
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Application No.: US10525173Application Date: 2003-08-06
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Publication No.: US07645646B2Publication Date: 2010-01-12
- Inventor: Nigel D. Young
- Applicant: Nigel D. Young
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips Electronics N.V.
- Current Assignee: Koninklijke Philips Electronics N.V.
- Current Assignee Address: NL Eindhoven
- Priority: GB0219771.3 20020824
- International Application: PCT/IB03/03484 WO 20030806
- International Announcement: WO2004/019123 WO 20040304
- Main IPC: H01L21/339
- IPC: H01L21/339
Abstract:
In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimization of the respective TFT and diode properties while being compatible with the complex pixel context of the display. High temperature processes for making the active semiconductor film (10) of the TFT more crystalline than an active semiconductor film (40) of the diode and for forming the source and drain doped regions (s1,s2, d1,d2) of the TFT are carried out before depositing the active semiconductor film (40) of the diode. Thereafter, the lateral extent of the diode is defined by etching while protecting with an etch-stop film (30) an interconnection film (20) that can provide a doped bottom electrode region (41) of the diode as well as one of the doped regions (s2, g1) of the TFT.
Public/Granted literature
- US20060030084A1 Manufacture of electronic devices comprising thin-film circuit elements Public/Granted day:2006-02-09
Information query
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