Invention Grant
US07645636B2 Semiconductor device and method for producing it, and use of an electrospinning method
有权
半导体装置及其制造方法以及静电纺丝法的使用
- Patent Title: Semiconductor device and method for producing it, and use of an electrospinning method
- Patent Title (中): 半导体装置及其制造方法以及静电纺丝法的使用
-
Application No.: US11558190Application Date: 2006-11-09
-
Publication No.: US07645636B2Publication Date: 2010-01-12
- Inventor: Ralf Wombacher
- Applicant: Ralf Wombacher
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja PLLC
- Priority: DE102005054267 20051111
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/31
Abstract:
A semiconductor device and a method for producing it, and the use of the electrospinning method is disclosed. In one embodiment, delamination of the plastic housing composition from the circuit carrier can occur under loading, which can lead to the failure of the semiconductor device. For better adhesion, an adhesion-promoting layer having fibers applied by electrospinning is arranged between the circuit carrier and the plastic housing composition.
Public/Granted literature
- US20070108637A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING IT, AND USE OF AN ELECTROSPINNING METHOD Public/Granted day:2007-05-17
Information query
IPC分类:
