Invention Grant
- Patent Title: Self aligned memory element and wordline
- Patent Title (中): 自对准存储元件和字线
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Application No.: US11750724Application Date: 2007-05-18
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Publication No.: US07645632B2Publication Date: 2010-01-12
- Inventor: Patrick K. Cheung , Ashok M. Khathuria
- Applicant: Patrick K. Cheung , Ashok M. Khathuria
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Turocy & Watson, LLP
- Main IPC: H01L51/40
- IPC: H01L51/40

Abstract:
An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrode layer of the memory cells to the second conductive layer. Optionally, a conductivity facilitating layer is formed over the conductive layer. Dielectric material separates the memory cells. The memory cells are self-aligned with the bitlines formed in the first conductive layer and the wordlines formed in the second conductive layer.
Public/Granted literature
- US20070224724A1 SELF ALIGNED MEMORY ELEMENT AND WORDLINE Public/Granted day:2007-09-27
Information query
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