Method of producing nitride-based semiconductor device, and light-emitting device produced thereby

Invention Grant

US07645622B2 Method of producing nitride-based semiconductor device, and light-emitting device produced thereby 失效

Title translation: 生产氮化物基半导体器件的方法和由此制造的发光器件

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Patent Title: Method of producing nitride-based semiconductor device, and light-emitting device produced thereby
Patent Title (中): 生产氮化物基半导体器件的方法和由此制造的发光器件
Application No.: US11408689

Application Date: 2006-04-20
Publication No.: US07645622B2

Publication Date: 2010-01-12
Inventor: Mayuko Fudeta , Hiroshi Nakatsu
Applicant: Mayuko Fudeta , Hiroshi Nakatsu
Applicant Address: JP Osaka
Assignee: Sharp Kabushiki Kaisha
Current Assignee: Sharp Kabushiki Kaisha
Current Assignee Address: JP Osaka
Agency: Morrison & Foerster LLP
Priority: JP2005-123910 20050421; JP2005-261061 20050908
Main IPC: H01L21/00
IPC: H01L21/00

Method of producing nitride-based semiconductor device, and light-emitting device produced thereby

Abstract:

A method of producing a nitride-based semiconductor device includes the steps of growing an InxAlyGa1-x-yN (0≦x, 0≦y, x+y

Abstract(Chinese):

一种生产氮化物基半导体器件的方法包括以下步骤：使In x Al y Ga 1-x-y N（0≤x≤0,0≤y，x + y <1）缓冲层（2; 12; 22; 32; 42 ）在第一衬底温度下在衬底（1; 11; 21; 31; 41）上，并在第二衬底上在缓冲层上生长第一导电型氮化物基半导体层（4; 14; 24; 34; 44）基板温度。第一个温度高于第二个温度。

Public/Granted literature

US20060240584A1 Method of producing nitride-based semiconductor device, and light-emitting device produced thereby Public/Granted day:2006-10-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备